FEATURES
- Upgraded CABL series as user-friendly multi user management.
- Windows OS, conversion soft for GDSII & DXF CAD files.
- Point beam.
- TFE emitter.
- Achieving <2nm line width with 50kV acceleration voltage.
- High stitching & overlay accuracy.
- Stable beam current & beam position.
- Field size modulation (patented), minimum address size as 0.0012nm.
- Chirped GRT.
- Axial Symmetrical PatternWritting method.
- Thermal cotroller.
APPLICATIONS
- Ultra thin lines.
- Line & space.
- Dot patterns.
- 3D processing.
- Axial symmetrical patterns.
- Si semiconductor.
- Optical device.
- MEMS devices.
SPECIFICATIONS
| Gun/Acceleration Voltage | TFE（ZrO/W) /5-50kV |
| Beam size/min. width | 2.0nm/10nm |
| Scanning method | Vector scan(X,Y), Vector scan(r,theta) standard |
| Raster scan, spot scan(option) |
Field size modulation, Axial symmetrical pattern, RAM DAC digital spot writing, 3D writing method. |
| Field size | 30umx30um,60umx60um, 120umx120um,300umx300um, 600umx600um(standard) 1200umx1200um,2400umx2400um(option) |
| Pixel | 20,000×20,000dot,60,000×60,000dot@vector scan(estandar)240,000×240,000dot@vector scan(opcion)4,000×4,000dot， 4,000×4,000dot,10,000×10,000dot @raster scan(opcion). |
| Min. address size | 10nm@600umx600um field, 2nm@120umx120um field(standard)| 0.0012nm@500umx500um field(standard) |
| Scan rate/Resolution | Vector scan(Analog): 0.05-300uS/0.01us(standard)| Vector scan(Digital): 0.2-300uS/0.1us(standard)| Raster scan: 0.3-300uS/0.1us(Option) |
| Wafer size | 4,6,8inchΦ(other size, other shape is OK) |
| Stitching accuracy | 50nm(3sigma)@500umx500um,| 20nm(2sigma)@50umx50um |
| Overlay accuracy | 50nm(3sigma)@500umx500um,| 20nm(2sigma)@50umx50um |
| CAD software | original CAD(standard), ＧDSⅡconversion(option), DXＦ conversion(option) |
| OS | Windows2000, XP |
