APPLICATIONS
- Metal Etching.
- Al2O3, Si, SiO2, Si3N4 Etching.
- Ashing Process.
- MEMS Process.
- PSS,GaN etc.
SPECIFICATIONS
| Plasma Source | Specially Designed Antenna Module for High Density Plasma |
| Sample Size | 6”Wafer |
| Source(ICP) Power | RF 1000W |
| Bias Power | RF 600W |
| High Vacuum Pumping System | TMP + Mechanical Rotary Pump |
| Sample Loading Unloading | Vacuum Load-Lock System |
| Plasma Density | >5×10-11 /cm3 |
| Ultimate Pressure | <5x10-6Torr within 1 hour |
| Etching Uniformity | <±5% |
