26LSC4000

FEATURES

  • 21” OD, 15”x15” Substrates.
  • 450 mm Wafer.
  • Large Environmental Chamber with Megasonic DI, Brush, Hot DI, High Pressure DI, Heated N2, Chemical Dispense Arm.
  • Variable Speed Brush with Chemical Dispense.
  • PC Controlled with LabVIEW Software.
  • Touchscreen User Interface.
  • Manual Load and Unload.
  • Safety Interlocks and Alarm.
  • 30”D x 26”W Footprint.

APPLICATIONS

    Cleaning

  • Si Wafers.
  • Saphire Wafers.
  • Chips on Wafer Frame.
  • Display Panels.
  • ITO Coated Displays.
  • Patterned and Un-patterned Masks.
  • Mask Blanks.
  • Pelliclized reticles.
  • Contact Masks.

    Photoresist Processing

  • Resist Coating.
  • Resist Lift-Off.
  • Resist stripping with Piranha.

    Etching

  • Metal Etching of Al, Au, Cr, Ti.

OPTIONS

    Piranha Cleaning

  • H2SO4 and H2O2 Dispensed and Mixed on the Wafer.
  • IR Heating > 200 °C.
  • Brush Clean.
  • Megasonic DI Water Clean.
  • Heated N2 and Spin Dry.

    CMP Wafer Cleaning

  • Removes CMP Particles with Brush and Megasonic DI Cleaning.
  • Chemical Dispense Arm.
  • Chemical Dispense Canisters.
  • Special Chucks for Front Side and Back Side Brush Cleaning.
  • Variable Speed (< 800 rpm)PVA Brush.
  • Adjustable Brush/Wafer Contact Pressure.
  • Chemical Dispense Through Brush.