FEATURES
- Stand Alone System, 26“D x 44”W Footprint.
- Aluminum or Stainless Steel Chamber.
- Stainless Steel Cabinet.
- Capable of etching Si compounds (~400 Å/min) and metals.
- Typical Si etch rate, 400 Å/min.
- Upto 12“ Anodized RF Platen.
- Water Cooled and Heated RF Platen.
- Large Self Bias.
- Shower Head gas distribution.
- Turbomolecular Pump.
- Up to eight MFCs.
- No flexing of gas lines.
- Down Stream Pressure Control.
- Dual Etch capability: RIE and Plasma Etch.
- End Point Detection.
- Pneumatically Lifted Top.
- Manual or automatic loading/unloading.
- PC Controlled with LabVIEW.
- Recipe Driven, Password Protected.
- Fully Safety Interlocked.
- Optional ICP source and cryogenic cooling of the platen for deep Si etch.
