APPLICATIONS
- Silicon etching.
- Dielectrics etching (SiO2, Si3N4, etc.)
- Polymide etching.
SPECIFICATIONS
| Substrate Size | 6 inch |
| Max. Temperature | 700°C (on heater) |
| RF Power Supply | 13.56MHz, 600W |
| Gas Flow System | Flow Control Range0~100sccm Gas Ar, O2, SF6, CHF3(4 Channel + option). |
| Ultimate Pressure | <1 x 10-6 Torr within 10min. |
